Electrical Parameter Extraction & Modeling of Si1-xGex HBT for HF Applications

SiGe technology is sincerely challenging III/V and II/VI technologies in the realm of high frequency electronics applications, for example optical fibre and mobile communications. In this paper a model of SiGe HBT with uniform impurity doping in the base for high frequency application is studied. The high frequency parameters are extracted with the help of simulated Zand Yparameters of two port equivalent circuits of the proposed SiGe HBT device and electrical parameters are calculated with the help of small-signal analysis of projected device. Later, the topics are also involved in instantaneous investigation of effect of Ge concentration on various electrical as well as HF parameters of this SiGe HBT. This method is validated by the examination of certain linear relations of device frequency behaviour as forecasted by the analogous theoretical analysis. Further, the precision of our method is validated by simulated S–parameter plots. The device characteristics of the proposed model are found much advanced to those of III-V semiconductor devices. These results have been also validated using a viable numerical device simulator ATLAS from Silvaco International. Keywords-Silicon; SiGe;HBT; Ge Concentration; Small-signal Analysis; Intrinsic Parameters